Multivalency-driven formation of Te-based monolayer materials: A combined first-principles and experimental study. IEEE Trans Electron Devices, 2015, 62, 3459 2D semiconductor FETs: Projections and design for sub-10 nm VLSI doi: 10.1109/TED.2015.2443039 2D semiconductor FETs: Projections and design for sub-10 nm VLSI. Phys Rev Appl, 2020, 13, 044066 Designing sub-10-nm metal-oxide-semiconductor field-effect transistors via ballistic transport and disparate effective mass: The case of two-dimensional BiN doi: 10.1103/PhysRevApplied.13.044066Ĭao W, Kang J H, Sarkar D, et al. Designing sub-10-nm metal-oxide-semiconductor field-effect transistors via ballistic transport and disparate effective mass: The case of two-dimensional BiN. 2D V-V binary materials: Status and challenges. Chem Soc Rev, 2018, 47, 982 Recent progress in 2D group-VA semiconductors: From theory to experiment doi: 10.1039/C7CS00125H Recent progress in 2D group-VA semiconductors: From theory to experiment. Science, 2016, 354, 99 MoS 2 transistors with 1-nanometer gate lengths doi: 10.1126/science.aah4698 MoS 2 transistors with 1-nanometer gate lengths. Science, 2015, 349, aab2750 Nanomaterials in transistors: From high-performance to thin-film applications doi: 10.1126/science.aab2750ĭesai S B, Madhvapathy S R, Sachid A B, et al. Nanomaterials in transistors: From high-performance to thin-film applications. Nat Mater, 2007, 6, 810 Integrated nanoelectronics for the future doi: 10.1038/nmat2014įranklin A D. Integrated nanoelectronics for the future. Key words: first principle, two-dimensional material, electronic properties, arsenene, MOSFETĬhau R, Doyle B, Datta S, et al. Therefore, the puckered arsenene is an attractive channel material in next-generation electronics. Furthermore, the benchmarking of the intrinsic arsenene FETs and the 32-bit arithmetic logic unit circuits also shows that the devices possess high switching speed and low energy dissipation, which can be comparable to the CMOS technologies and other CMOS alternatives. Interestingly, the channel length limit for arsenene FETs can reach 7-nm. Moreover, the puckered arsenene FETs with a 10-nm channel length possess high on/off ratio above 10 5 and a steep subthreshold swing below 75 mV/dec, which have the potential to design high-performance electronic devices. And it also holds a high electron mobility, as the highest value can reach 20 045 cm 2V –1s –1. The puckered arsenene exhibits an anisotropic characteristic, as effective mass for the electron/hole in the armchair and zigzag directions is 0.35/0.16 m 0 and 1.26/0.32 m 0. Herein, we provide a comprehensively study on the electronic and ballistic transport properties of the puckered arsenene by the density functional theory coupled with nonequilibrium Green’s function formalism. We also discuss the dependence of low-field carrier mobility on the thickness of multilayer phosphorene.Abstract: Two-dimensional material has been regarded as a competitive silicon-alternative with a gate length approaching sub-10 nm, due to its unique atomic thickness and outstanding electronic properties. For thin multilayer phosphorene we confirm the most disappointing results, with a strongly anisotropic carrier mobility that does not exceed ∼ 30 cm 2 V − 1 s − 1 at 300 K for electrons along the armchair direction. We also employ first-principles methods to study high-field transport characteristics in monolayer and bilayer phosphorene. We argue that the use of the most accurate models results in a calculated performance that is at the disappointing lower end of the predicted range. Given this state of uncertainty, we review critically the physical models employed, considering phosphorene, a group-V material, as a specific example. Recent ab initio theoretical calculations of the electrical performance of several two-dimensional materials predict a low-field carrier mobility that spans several orders of magnitude (from 26 000 to 35 cm 2 V − 1 s − 1, for example, for the hole mobility in monolayer phosphorene) depending on the physical approximations used.
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